| PART |
Description |
Maker |
| APTDF200H60G |
FRED 50-1700V
|
Microsemi
|
| APTDF200H120G |
FRED 50-1700V
|
Microsemi
|
| APTDF100H170G |
FRED 50-1700V
|
Microsemi
|
| BYP102 C67047-A2071-A2 |
FRED Diode(FRED 二极 李华明二极管（弗雷德二极管）
FRED Diode (Fast recovery epitaxial diode Soft recovery characteristics)
From old datasheet system
FRED-FET Diode
|
Siemens Semiconductor G...
SIEMENS AG
SIEMENS[Siemens Semiconductor Group]
Infineon
|
| STC04IE170HV |
Emitter switched bipolar transistor ESBT? 1700V - 4A - 0.17 W
Emitter switched bipolar transistor ESBT㈢ 1700V - 4A - 0.17 W
|
STMicroelectronics
|
| FFAF10U170S FFAF10U170STU |
10A/1700V Damper Diode
|
Fairchild Semiconductor
|
| SIGC68T170R3 |
IGBTs - HV Chips - SIGC68T170R3, 1700V, 50A
|
Infineon
|
| BYP100 C67047-A2254-A2 BYP300 C67047-A2250-A2 |
From old datasheet system
FRED DIODE (FAST RECOVERY EPITAXIAL DIODE SOFT RECOVERY CHARACTERISTICS)
FRED-FET Diode
|
SIEMENS AG
SIEMENS[Siemens Semiconductor Group]
Infineon
|
| STC04IE170HV STC04IE170HV0611 |
Emitter switched bipolar transistor ESBT 1700V - 4A - 0.17
|
STMicroelectronics
|
| 2MBI450VN-170-50 |
IGBT MODULE (V series) 1700V / 450A / 2 in one package
|
Fuji Electric
|
| 2MBI550VJ-170-50 |
IGBT MODULE (V series) 1700V / 550A / 2 in one package
|
Fuji Electric
|
| 6MBI225U-170 |
IGBT Module U-Series 1700V / 225A 6 in one-package
|
List of Unclassifed Manufacturers
ETC[ETC]
|
